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PLB16012U

Features: · Input matching cell allows an easier design of circuits· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Interdigitated structure provides high emitter efficiency· Gold metallization realizes very stable characteristics and excell...

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SeekIC No. : 004463251 Detail

PLB16012U: Features: · Input matching cell allows an easier design of circuits· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Interdigitated structure ...

PLB16012U Data Sheet

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Part Number:
PLB16012U
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· Input matching cell allows an easier design of circuits
· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Interdigitated structure provides high emitter efficiency
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance.


Application

Common base, class C, power amplifiers at 1.6 GHz. Also suitable for operation in the 1.4 to 1.8 GHz range.




Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
 collector-base voltage open emitter
-
45
V
VCEO
 collector-emitter voltage open base
-
15
V
VCES
 collector-emitter voltage RBE = 0
-
40
V
VEBO
 emitter-base voltage open collector
-
3
V
IC
 collector current (DC)  
-
0.9
A
PTOT
 total power dissipation Tmb = 75
-
15
W
TSTG
 storage temperature  
-60
+150
TJ
 operating junction temperature  
-
200
TSLD
 soldering temperature t10 s; note 1
-
235

Note
1. Up to 0.3 mm from ceramic.


Description

PLB16012U NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package with base connected to flange.


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