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PLB16004U

Features: · Diffused emitter ballasting resistors improve excellent current sharing and withstanding a high VSWR· Interdigitated common-base structure provides high emitter efficiency· Gold metallization with barrier realizes very stable characteristics and excellent lifetime· Multicell geometry g...

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SeekIC No. : 004463248 Detail

PLB16004U: Features: · Diffused emitter ballasting resistors improve excellent current sharing and withstanding a high VSWR· Interdigitated common-base structure provides high emitter efficiency· Gold metalliz...

PLB16004U Data Sheet

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Part Number:
PLB16004U
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· Diffused emitter ballasting resistors improve excellent current sharing and withstanding a high VSWR
· Interdigitated common-base structure provides high emitter efficiency
· Gold metallization with barrier realizes very stable characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Internal input and output prematching networks allow an easier design of circuits.


Application

Intended for use in common-base class C power amplifiers at 1.6 GHz.


Description

PLB16004U NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with base connected to flange.




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