Features: • RDS(ON), VGS@10V,IDS@10A=40m• RDS(ON), VGS@4.5V,IDS@8.0A=50m• Advanced Trench Process Technology• High Density Cell Design For Ultra Low On-Resistance• Specially Designed for DC/DC Converters• Fully Characterized Avalanche Voltage and Current• ...
PJD15N06L: Features: • RDS(ON), VGS@10V,IDS@10A=40m• RDS(ON), VGS@4.5V,IDS@8.0A=50m• Advanced Trench Process Technology• High Density Cell Design For Ultra Low On-Resistance• Spec...
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PARAMETER |
Symbol |
Limi t |
Uni ts |
Drai n-Source Voltage |
V DS |
60 |
V |
Gate-Source Voltage |
V GS |
+20 |
V |
Conti nuous Drai n Current |
ID |
15 |
A |
Pulsed Drai n Current 1) |
I DM |
60 |
A |
Maximum Power Di ssi pati on TA =25 TA =75 |
PD |
38 22 |
W |
Operati ng Juncti on and Storage Temperature Range |
TJ ,T STG |
-55 to + 150 |
|
Avalanche Energy with Single Pulse ID=21A, VDD=30V, L=0.5mH |
E AS |
120 |
mJ |
Junction-to-Case Thermal Resistance |
RJC |
3.3 |
/W |
Junction-to Ambient Thermal Resistance(PCB mounted)2 |
RJA |
50 |
/W |