Features: • RDS(ON), VGS@10V,IDS@30A=9m• RDS(ON), VGS@4.5V,IDS@30A=12m• Advanced trench process technology• High Density Cell Design For Uitra Low On-Resistance• Specially Designed for DC/DC Converters and Motor Drivers• Fully Characterized Avalanche Voltage and...
PJD09N03: Features: • RDS(ON), VGS@10V,IDS@30A=9m• RDS(ON), VGS@4.5V,IDS@30A=12m• Advanced trench process technology• High Density Cell Design For Uitra Low On-Resistance• Specia...
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PARAMETER |
SYMBOL |
Limit |
Units | |
Drain-Source Voltage |
VDS |
25 |
V | |
Gate-Source Voltage |
VGS |
±20 |
V | |
Continuous Drain Current |
IO |
50 |
A | |
Pulsed Drain Current 1) |
IDM |
240 |
A | |
Maximum Power Dissipation | TA = 25 |
PD |
45 |
W |
TA = 75 |
26 | |||
Operating Junction and Storage Temperature Range |
TJ,TSTG |
-50 to +150 |
||
Avalanche Energy with Single Pulse ID=23A,VDD=25V,L=0.5mH |
EAS |
130 |
mJ | |
Junction-to-Case Thermal Resistance |
RJC |
2.8 |
/W | |
Junction-to Ambient Thermal Resistance(PCB mounted)2 |
RJA |
50 |
/W |