PJ99

PJ99 process is a type of silicon junction field-effect transistor which has two applications: The first one is general purpose amplifier and the second is analog switch.

There are some absolute maximum ratings about PJ99.Gate current(Ig) is 10 mA. Operating junction temperature(Tj) is +150. Storage temperature(Ts) is -65 to +175.Static electrical characteristics: Gate source breakdwon voltage(V_(BR)GSS) is 30 V min and 40 V typ when IG is 1 uA and VDS is 0 V.Reverse gate leakage current(I_GSS) is 0.5 nA typ and 1 nA max when VGS is 20 V and VDS is 0 V.Drain saturation current(pulsed)(I_DSS) is -5 mA min and -60 mA max when VDS is -15 V and VGS is 0 V. Gate source cutoff voltage(V_GS(off) ) is 1 V min and 8 V max when V_DS is -15 V and ID is 1 nA.Dynamic electrical charactersitics: Drain source ON resistance(r_ds(on) ) is 75 ohms when I_D is 1 mA, V_GS is 0 V and f is 1 kHz. Forward transconductance(gfs) is 15 mS when VDs is -15 V, V_GS is 0 V and f is 1 kHz. Input capacitance(Ciss) is 18 pF when V_DS is 15 V, V_GS is 0 V and f is 1 kHz. Feedback capacitance(Crss) is 4.5 pF when V_DS is 0 V, V_GS is 10 V and f is 1 kHz. Turn on delay time(t_d(on) ) is 5 ns when V_DD is -10 V, I_D(ON) is -15 mA, RL is 580 ohms, V_GS(ON) is 0 V and V_GS(ON) is 12 V.Rise time(tr) is 10 ns when V_DD is -10 V, I_D(ON) is -15 mA, RL is 580 ohms, V_GS(ON) is 0 V and V_GS(ON) is 12 V.Turn off delay time(t_d(off) ) is 6 ns when V_DD is -10 V, I_D(ON) is -15 mA, RL is 580 ohms, V_GS(ON) is 0 V and V_GS(ON) is 12 V.Fall time(tf) is 5 ns when V_DD is -10 V, I_D(ON) is -15 mA, RL is 580 ohms, V_GS(ON) is 0 V and V_GS(ON) is 12 V.

Well, this is a simple introduction to PJ99, if you want to know more about PJ99, please pay more attention to our web. Thanks for your attention!