Features: • RDS(ON), VGS@10V,IDS@30A=6m• RDS(ON), VGS@4.5V,IDS@30A=9m• Advanced Trench Process Technology• High Density Cell Design For Ultra Low On-Resistance• Specially Designed for DC/DC Converters and Motor Drivers• Fully Characterized Avalanche Voltage and ...
PJ06N03D: Features: • RDS(ON), VGS@10V,IDS@30A=6m• RDS(ON), VGS@4.5V,IDS@30A=9m• Advanced Trench Process Technology• High Density Cell Design For Ultra Low On-Resistance• Special...
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Parameter | Symbol | Rating | Unit |
Drai n-Source Voltage | V DS | 25 | V |
Gate-Source Voltage | V GS | +20 | V |
Conti nuous Drai n Current | ID | 60 | A |
Pulsed Drai n Current 1) | I DM | 320 | A |
Maximum Power Di ssi pati on TA =25OC TA =75OC |
PD | 70 42 |
W |
Operati ng Juncti on and Storage Temperature Range | TJ ,T STG | -55 to + 150 | °C |
Avalanche Energy with Single Pulse ID=40A, VDD=25V, L=0.5mH |
E AS | 400 | mJ |
Junction-to-Case Thermal Resistance | RJC | 1.8 | °C/W |
Junction-to Ambient Thermal Resistance(PCB mounted)2 | RJA | 50 | °C/W |