Position: Home  > All Categories> Integrated Circuits (ICs) > PHX9NQ20T,127

PHX9NQ20T,127

MOSFET N-CH 200V 5.2A TO220F

product image

PHX9NQ20T,127 Picture
See larger image
SeekIC No. : 003433200 Detail

PHX9NQ20T,127: MOSFET N-CH 200V 5.2A TO220F

PHX9NQ20T,127 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
PHX9NQ20T,127
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/6/9

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: TrenchMOS™ Manufacturer: NXP Semiconductors
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 200V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 5.2A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) @ Vgs: 24nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 959pF @ 25V
Power - Max: 25W Mounting Type: Through Hole
Package / Case: TO-220-3 Isolated Tab Supplier Device Package: TO-220-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 5.2A
Gate Charge (Qg) @ Vgs: 24nC @ 10V
Drain to Source Voltage (Vdss): 200V
Power - Max: 25W
Packaging: Tube
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Series: TrenchMOS™
Manufacturer: NXP Semiconductors
Vgs(th) (Max) @ Id: 4V @ 1mA
Input Capacitance (Ciss) @ Vds: 959pF @ 25V
Package / Case: TO-220-3 Isolated Tab
Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V


Parameters:

Technical/Catalog InformationPHX9NQ20T,127
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C5.2A
Rds On (Max) @ Id, Vgs400 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) @ Vds 959pF @ 25V
Power - Max25W
PackagingTube
Gate Charge (Qg) @ Vgs24nC @ 10V
Package / CaseTO-220-3 Full Pack
FET FeatureStandard
Drawing Number568; SOT186A; TO-220F; 3
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PHX9NQ20T,127
PHX9NQ20T,127



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Filters
PICO2205A
PICO2204A
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Discrete Semiconductor Products
T508N12TOF
MUR20040
Test Equipment
TOP853
TOP2005
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Prototyping Products
AVT4168
DE1
View more