Position: Home  > All Categories> Integrated Circuits (ICs) > PHX8NQ11T,127

PHX8NQ11T,127

MOSFET N-CH 110V 7.5A SOT186A

product image

PHX8NQ11T,127 Picture
See larger image
SeekIC No. : 003433199 Detail

PHX8NQ11T,127: MOSFET N-CH 110V 7.5A SOT186A

PHX8NQ11T,127 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
PHX8NQ11T,127
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: TrenchMOS™ Manufacturer: NXP Semiconductors
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 110V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 7.5A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) @ Vgs: 14.7nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 360pF @ 25V
Power - Max: 27.7W Mounting Type: Through Hole
Package / Case: TO-220-3 Isolated Tab Supplier Device Package: TO-220-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Input Capacitance (Ciss) @ Vds: 360pF @ 25V
Current - Continuous Drain (Id) @ 25° C: 7.5A
Power - Max: 27.7W
Packaging: Tube
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Series: TrenchMOS™
Manufacturer: NXP Semiconductors
Gate Charge (Qg) @ Vgs: 14.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-220-3 Isolated Tab
Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V
Drain to Source Voltage (Vdss): 110V


Parameters:

Technical/Catalog InformationPHX8NQ11T,127
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)110V
Current - Continuous Drain (Id) @ 25° C7.5A
Rds On (Max) @ Id, Vgs180 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 360pF @ 25V
Power - Max27.7W
PackagingTube
Gate Charge (Qg) @ Vgs14.7nC @ 10V
Package / CaseTO-220-3 Full Pack
FET FeatureStandard
Drawing Number568; SOT186A; TO-220F; 3
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PHX8NQ11T,127
PHX8NQ11T,127



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Integrated Circuits (ICs)
TA8435H
1MB12-140
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
Circuit Protection
A50QS75-4Y
F-17*77
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
View more