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PHW50NQ15T

Features: • 'Trench' technology• Very low on-state resistance • Fast switching• Low thermal resistanceApplication• d.c. to d.c. converters • switched mode power suppliesSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source volt...

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SeekIC No. : 004460742 Detail

PHW50NQ15T: Features: • 'Trench' technology• Very low on-state resistance • Fast switching• Low thermal resistanceApplication• d.c. to d.c. converters • switched mode power s...

PHW50NQ15T Data Sheet

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Part Number:
PHW50NQ15T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance


Application

• d.c. to d.c. converters
• switched mode power supplies


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage Tj = 25 to 175 - 150 V
VDGR Drain-gate voltage Tj = 25 to 175; RGS = 20 k - 150 V
VGS Gate-source voltage   - ± 20 V
ID Continuous drain current

Tmb = 25 ; Tmb = 100

- 50 36 A
IDM Pulsed drain current Tmb = 25 - 200 A
PD Total power dissipation Tmb = 25 - 250 w
Tstg, Tj Operating junction and storage temperature range   -55 175



Description

PHW50NQ15T: N-channel enhancement mode field-effect power transistor in a plastic envelope using 'trench'technology.


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