ApplicationThese products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and ...
PHT8N06LT: ApplicationThese products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips...
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These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | Drain-source voltage | - | - | 55 | V |
VDGR | Drain-gate voltage | RGS = 20 k | - | 55 | V |
±VGS | Gate-source voltage | - | - | 13 | V |
ID | Drain current (DC) | TSP = 25 | - | 7.5 | A |
ID | Drain current (DC) | On PCB in Fig.2 Tamb = 25 | - | 3.5 | A |
ID | Drain current (DC) | On PCB in Fig.2 Tamb = 100 | - | 2.2 | A |
IDM | Drain current (pulse peak value) | Tsp = 25 | - | 40 | A |
Ptot | Total power dissipation | Tsp = 25 | - | 8.3 | W |
Ptot | Total power dissipation | On PCB in Fig.2 Tamb = 25 | - | 1.8 | W |
Tstg, Tj | Storage & operating temperature | - | -55 | 150 |
PHT8N06LT N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has integral zener diodes giving ESD protection.PHT8N06LT is intended for use in DC-DC converters and general purpose switching applications.