MOSFET TAPE13 PWR-MOS
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 3 A | ||
Resistance Drain-Source RDS (on) : | 90 mOhms | Configuration : | Single Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-223 | Packaging : | Reel |
Technical/Catalog Information | PHT6NQ10T,135 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 6.5A |
Rds On (Max) @ Id, Vgs | 90 mOhm @ 3A, 10V |
Input Capacitance (Ciss) @ Vds | 633pF @ 25V |
Power - Max | 8.3W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 21nC @ 10V |
Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
FET Feature | Standard |
Drawing Number | 568; SOT223; ; |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | PHT6NQ10T,135 PHT6NQ10T,135 |