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PHT6N03LT

Features: • 'Trench' technology • Very low on-state resistance• Fast switching • Stable off-state characteristics• High thermal cycling performance • Surface mounting packageSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source...

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SeekIC No. : 004460721 Detail

PHT6N03LT: Features: • 'Trench' technology • Very low on-state resistance• Fast switching • Stable off-state characteristics• High thermal cycling performance • Surface moun...

PHT6N03LT Data Sheet

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Part Number:
PHT6N03LT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/26

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Product Details

Description



Features:

• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Surface mounting package




Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage Tj = 25 °C to 150°C - 30 V
VDGR Drain-gate voltage Tj = 25 °C to 150°C; RGS = 20 k - 30 V
VGS Gate-source voltage   - ±13 V
ID Continuous drain current Tamb = 25 °C; VGS = 10 V Tamb = 100 °C; VGS = 10 V - 5.9 4.1 A A
IDM Pulsed drain current Tamb = 25 °C - 23.6 A
PD Total power dissipation Tamb = 25 °C - 1.8 W
Tstg, Tj Operating junction and storage temperature - -55 150 °C



Description

N-channel enhancement mode logic level field-effect power transistor using 'trench' technology. The PHT6N03LT has very low on-state resistance. It is intended for use in dc to dcconverters and general purpose switching applications.

The PHT6N03LT is supplied in the SOT223 surface mounting package.




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