MOSFET RAIL PWR-MOS
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Features: ·Low on-state resistance·Fast switching.Application·High frequency computer motherboard ...
Features: ·Low gate charge·Low on-state resistance.Application·Optimized as a control FET in DC to...
Features: ·Low on-state resistance·Fast switching.Application·Computer motherboard high frequency ...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 8.7 A | ||
Resistance Drain-Source RDS (on) : | 0.4 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Technical/Catalog Information | PHP9NQ20T,127 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 8.7A |
Rds On (Max) @ Id, Vgs | 400 mOhm @ 4.5A, 10V |
Input Capacitance (Ciss) @ Vds | 959pF @ 25V |
Power - Max | 88W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 24nC @ 10V |
Package / Case | TO-220AB-3 |
FET Feature | Standard |
Drawing Number | 568; SOT78; ; 3 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | PHP9NQ20T,127 PHP9NQ20T,127 |