PHP9NQ20T

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 8.7 A
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.4 Ohms
Packaging : Rail


Features:

• 'Trench' technology
• Low on-state resistance
• Fast switching
• Low thermal resistance


Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDSS VDGR VGS ID IDM PD Tj, Tstg	Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature	Tj = 25 to 175Tj = 25 to 175; RGS = 20 kW Tmb = 25 ; VGS = 10 V Tmb = 100 ; VGS = 10 V Tmb = 25 Tmb = 25	- - - - - - - -55	200 200 ± 20 8.7 6.2 35 88 175	V V V A A A W °C

Description

PHP9NQ20T N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.

The PHP9NQ20T is supplied in the SOT78 (TO220AB) conventional leaded package
The PHB9NQ20T is supplied in the SOT404 (D2PAK) surface mounting package
The PHD9NQ20T is supplied in the SOT428 (DPAK) surface mounting package