PHP83N03LT

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Gate-Source Breakdown Voltage : +/- 15 V
Package / Case : TO-220AB
Continuous Drain Current : 75 A
Packaging : Rail
Resistance Drain-Source RDS (on) : 0.009 Ohms


Features:

·Low on-state resistance
·Fast switching.


Application

·High frequency computer motherboard DC to DC converters


Pinout




Specifications

Symbol	Parameter	Conditions	Min	Max	Unit
VDS	drain-source voltage (DC)	Tj =25 to 175	-	25	V
VDGR	drain-gate voltage (DC)	Tj =25 to 175 ; RGS = 20 k	-	25	V
VGS	gate-source voltage(DC)		-	±15	V
VGSM	gate-source voltage	TP 50 s; pulsed; duty cycle = 25%;Tj 150		±20
ID	drain current (DC)	Tmb = 25 ; VGS = 5 V; Figure 2 and 3	-	75	A
		Tmb = 100 ; VGS = 5 V; Figure 2	-	61	A
IDM	peak drain current	Tmb = 25 ; pulsed; tp 10 s; Figure 3	-	240	A
Ptot	total power dissipation	Tmb = 25 ; Figure 1	-	115	W
Tstg	storage temperature		-55	+175
Tj	operating junction temperature		-55	+175
Source-drain diode
IS	source (diode forward) current (DC)	Tmb = 25	-	75	A
ISM	peak source (diode forward) current	Tmb = 25 ; pulsed; tp 10 s	-	240	A
Avalanche ruggedness
EAS	non-repetitive avalanche energy	unclamped inductive load; ID = 75 A; tp = 0.1 ms; VDD 15 V; RGS = 50 ; VGS = 5 V; starting Tj = 25	-	120	mJ
IAS	non-repetitive avalanche current	unclamped inductive load; VDD 15 V; RGS = 50 ; VGS = 5 V; starting Tj = 25	-	75	A

Description

N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology.

Product availability:

PHP83N03LT in a SOT78 (TO-220AB)

PHB83N03LT in a SOT404 (D2-PAK)

PHE83N03LT in a SOT226 (I2-PAK).