Features: • Repetitive Avalanche Rated• Fast switching• Stable off-state characteristics• High thermal cycling performance• Low thermal resistance• Fast reverse recovery diodePinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drai...
PHP6ND50E: Features: • Repetitive Avalanche Rated• Fast switching• Stable off-state characteristics• High thermal cycling performance• Low thermal resistance• Fast reverse r...
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Features: • 'Trench' technology• Very low on-state resistance• Fast switching...
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDSS | Drain-source voltage | Tj =25 to 150 | - | 500 | V |
VDGR | Drain-gate voltage | Tj =25 to 150 ; RGS = 20 k | - | 500 | V |
VGS | Gate-source voltage | -- | ±30 | V | |
ID | Continuous drain current | Tmb = 25 ;VGS = 10 V | 5.9 | A | |
Tmb = 100 ;VGS = 10 V | - | 3.7 | A | ||
IDM | Pulsed drain current | Tmb = 25 | - | 24 | A |
PD | Total power dissipation | Tmb = 25 | - | 125 | W |
Tj, Tstg | Operating junction and storage temperature |
-55 | 150 |
N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED). This gives improved switching performance in half bridge and full bridge converters making PHP6ND50E particularly suitable for inverters, lighting ballasts and motor control circuits.