PHP66NQ03LT

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Continuous Drain Current : 66 A
Packaging : Rail
Resistance Drain-Source RDS (on) : 0.0105 Ohms


Features:

·Low on-state resistance
·Fast switching.


Application

·High frequency computer motherboard DC to DC converters.


Pinout




Specifications

Symbol	Parameter	Conditions	Min	Max	Unit
VDS	drain-source voltage (DC)	25 Tj 175	-	25	V
VDGR	drain-gate voltage (DC)	25 Tj 175 ; RGS = 20 k	-	25	V
VGS	gate-source voltage(DC)		-	±15	V
VGSM	peak gate-source voltage	TP 50 s; pulsed; duty cycle = 25%;Tj 150		±20
ID	drain current (DC)	Tmb = 25 ; VGS = 5 V; Figure 2 and 3	-	57	A
		Tmb = 100 ; VGS = 5 V; Figure 2	-	40
		Tmb = 25 ; VGS =10 V	-	66
		Tmb = 100 ; VGS =10 V	-	45	A
IDM	peak drain current	Tmb = 25 ; pulsed; tp 10 s; Figure 3	-	228	A
Ptot	total power dissipation	Tmb = 25 ; Figure 1	-	93	W
Tstg	storage temperature		-55	+175
Tj	junction temperature		-55	+175
Source-drain diode
IS	source (diode forward) current (DC)	Tmb = 25	-	75	A
ISM	peak source (diode forward) current	Tmb = 25 ; pulsed; tp 10 s	-	228	A

Description

PHP66NQ03LT N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology.

Product availability:

PHP66NQ03LT in SOT78 (TO-220AB)

PHB66NQ03LT in SOT404 (D2-PAK)

PHD66NQ03LT in SOT428 (D-PAK).