Features: • 'Trench' technology• Very low on-state resistance• Fast switching• Low thermal resistance• Logic level compatibleApplication• High frequency computer motherboard d.c. to d.c. converters• High current switchingPinoutSpecifications SYMBOL ...
PHP55N04LT: Features: • 'Trench' technology• Very low on-state resistance• Fast switching• Low thermal resistance• Logic level compatibleApplication• High frequency computer ...
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Features: • 'Trench' technology• Very low on-state resistance• Fast switching...
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MIN. |
UNIT |
VDS |
Repetitive peak drain-source voltage |
Tj = 25 °C to 150°C |
- |
35 |
V |
VDGR |
Drain-gate voltage |
Tj = 25 °C to 175°C;RGS = 20 k |
- |
35 |
V |
VGS |
Gate-source voltage |
- |
±15 |
V | |
VGSM |
Gate-source voltage (pulse peak value) |
Tj 150°C |
- |
±20 |
V |
ID
|
Drain current (DC) |
Tmb = 25 °C |
- |
55 |
A |
Tmb = 100 °C |
- |
38 |
A | ||
IDM
|
Drain current per MOSFET (pulse peak value) |
Tmb = 25 °C |
- |
220 |
A |
Ptot |
Total power dissipation |
Tmb = 25 °C |
- |
103 |
W |
Tstg,Tj |
Storage & operating temperature |
-55 |
175 |
°C |
The PHP55N04LT is designed as N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using 'trench' technology. Typical applications of PHP55N04LT include high frequency computer motherboard DC to DC converters and high current switching.
PHP55N04LT has five features. The first one is 'Trench' technology. The second one is it would have very low on-state resistance. The third one is it would have fast switching. The fourth one is it has low thermal resistance. The fifth one is logic level compatible. That are all the main features.
Some limiting values of PHP55N04LT have been concluded into several points as follow. The first one is about its drain-source voltage which would be max 35V. The second one is about its drain-gate voltage which would be max 35V. The third one is about its gate-source voltage (DC) which would be max ±15V. The fourth one is about its gate-source voltage (pulse peak value) which would be max ±20V. The fifth one is about its drain current (DC) which would be 55A at 25°C and would be max 38A at 100°C. The sixth one is about its drain current (pulse peak value) which would be max 220A. The seventh one is about its total power dissipation which would be max 103W. The eighth one is about its operating junction and storage temperature which would be from -55 to 175°C.
Also some electrical characteristics about PHP55N04LT. The first one is about its drain-source breakdown voltage which would be min 35V. The second one is about its gate threshold voltage which would be min 1V and typ 1.5V and max 2V. The third one is about its drain-source on-state resistance which would be typ 11m and max 14m with condition of Vgs=10V and Id=25A. The fourth one is about its forward transconductance which would be min 10S and typ 28S. The fifth one is about its gate source leakage current which would be typ 10nA and max 100nA. The sixth one is about its zero gate voltage drain current which would be typ 0.05A and max 10A. And so on. For more information please contact us.