Features: • Repetitive Avalanche Rated• Fast switching• Stable off-state characteristics• High thermal cycling performance• Low thermal resistance• Fast reverse recovery diodePinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drai...
PHP4ND40E: Features: • Repetitive Avalanche Rated• Fast switching• Stable off-state characteristics• High thermal cycling performance• Low thermal resistance• Fast reverse r...
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Features: • 'Trench' technology• Very low on-state resistance• Fast switching...
Features: • 'Trench' technology• Very low on-state resistance• Fast switching...
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDSS | Drain-source voltage | Tj =25 to 175 | - | 400 | V |
VDGR | Drain-gate voltage | Tj =25 to 175 ; RGS = 20 k | - | 400 | V |
VGS | Gate-source voltage | -- | ±30 | V | |
ID | Continuous drain current | Tmb = 25 ;VGS = 10 V | 4.4 | A | |
Tmb = 100 ;VGS = 10 V | - | 2.7 | A | ||
IDM | Pulsed drain current | Tmb = 25 | - | 18 | A |
PD | Total power dissipation | Tmb = 25 | - | 83 | W |
Tj, Tstg | Operating junction and storage temperature |
-55 | 150 |
PHP4ND40E N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED). This gives improved switching performance in half bridge ansd full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circuits.