PHP47NQ10T

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Package / Case : TO-220AB
Continuous Drain Current : 47 A
Resistance Drain-Source RDS (on) : 0.028 Ohms
Packaging : Rail


Features:

·Fast switching
·Very low on-state resistance.


Application

·DC to DC converters
·Switched mode power supplies.


Pinout




Specifications

Symbol	Parameter	Conditions	Min	Max	Unit
VDS	drain-source voltage (DC)	Tj =25 to 175	-	100	V
VDGR	drain-gate voltage (DC)	Tj =25 to 175 ; RGS = 20 k	-	100	V
VGS	gate-source voltage(DC)		-	±20	V
ID	drain current (DC)	Tmb = 25 ; VGS = 10 V; Figure 2 and 3	-	47	A
		Tmb = 100 ; VGS = 10 V; Figure 2	-	33	A
IDM	peak drain current	Tmb = 25 ; pulsed; tp 10 s; Figure 3	-	187	A
Ptot	total power dissipation	Tmb = 25 ; Figure 1	-	166	W
Tstg	storage temperature		-55	+175
Tj	operating junction temperature		-55	+175
Source-drain diode
IS	source (diode forward) current (DC) Tmb = 25		-	47	A
ISM	peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s		-	187	A
Avalanche ruggedness
EAS	non-repetitive drain-source avalanche energy	unclamped inductive load;IAS = 30A; tp = 0.1 ms; VDD 25 V;RGS = 50 VGS = 5 V; starting Tj = 25 Figure 4	-	45	mJ

Description

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology.

Product availability:

PHP47NQ10T in SOT78 (TO-220AB)

PHB47NQ10T in SOT404 (D2-PAK).