PHP33NQ20T

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 200 V
Packaging : Rail
Resistance Drain-Source RDS (on) : 0.077 Ohms
Continuous Drain Current : 32.7 A


Features:

·Low on-state resistance
·Low thermal resistance
·Fast switching
·Low gate charge.


Application

·DC-to-DC primary side switching.


Pinout




Specifications

Symbol	Parameter	Conditions	Min	Max	Unit
VDS	drain-source voltage (DC)	25 Tj 175	-	200	V
VDGR	drain-gate voltage (DC)	25 Tj 175 ; RGS = 20 k	-	200	V
VGS	gate-source voltage (DC)		-	±20	V
ID	drain current (DC)	Tmb = 25 ; VGS = 10 V; Figure 2 and 3	-	32.7	A
		Tmb = 100 ; VGS = 10 V; Figure 2	-	23.1	A
IDM	peak drain current	Tmb = 25 ; pulsed; tp 10 s; Figure 3	-	65.4	A
Ptot	total power dissipation	Tmb = 25 ; Figure 1	-	230	W
Tstg	storage temperature		-55	+175
Tj	junction temperature		-55	+175
Source-drain diode
IS	source (diode forward) current (DC) Tmb = 25		-	32.7	A
ISM	peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s		-	65.4	A
Avalanche ruggedness
EDS(AL)S	non-repetitive drain-source avalanche energy	unclamped inductive load; ID = 10.4 A; tp = 0.14 ms; VDD 200 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25	-	190	mJ

Description

PHP33NQ20T Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology.