PHP32N06LT

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 34 A
Resistance Drain-Source RDS (on) : 0.037 Ohms
Packaging : Rail
Gate-Source Breakdown Voltage : 15 V


Features:

·TrenchMOS™ technology
·Logic level compatible.


Application

·General purpose switching
·Switched mode power supplies.


Pinout




Specifications

Symbol	Parameter	Conditions	Min	Max	Unit
VDS	drain-source voltage (DC)		-	60	V
VDGR	drain-gate voltage (DC)	RGS = 20 k	-	60	V
VGS	gate-source voltage (DC)		-	±15	V
VGSM	non-repetitive gate-source voltage	tp 50 s		±20	V
ID	drain current (DC)	Tmb = 25 ; VGS = 5 V; Figure 2 and 3	-	34	A
		Tmb = 100 ; VGS = 5 V; Figure 2	-	24	A
IDM	peak drain current	Tmb = 25 ; pulsed; tp 10 s; Figure 3	-	136	A
Ptot	total power dissipation	Tmb = 25 ; Figure 1	-	97	W
Tstg	storage temperature		-55	+175
Tj	operating junction temperature		-55	+175
Source-drain diode
IS	reverse drain current (DC)	Tmb = 25	-	34	A
ISM	pulsed reverse drain current	Tmb = 25 ; pulsed; tp 10 s	-	136	A
Avalanche ruggedness
WDSS	non-repetitive avalanche energy	unclamped inductive load; ID = 20 A; tp = 0.11 ms; VDS 25 V;VGS = 5 V; RGS = 50 ; starting at Tj = 25	-	100	mJ

Description

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology.

Product availability:

PHP32N06LT in SOT78 (TO220AB)

PHB32N06LT in SOT404 (D2-PAK).