PHP29N08T

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : 30 V
Continuous Drain Current : 27 A
Resistance Drain-Source RDS (on) : 0.05 Ohms
Packaging : Rail


Features:

·High noise immunity
·Low on-state resistance.


Application

·Industrial motor control.


Pinout




Specifications

Symbol	Parameter	Conditions	Min	Max	Unit
VDS	drain-source voltage (DC)	25 Tj 175	-	75	V
VDGR	drain-gate voltage (DC)	25 Tj 175 ; RGS = 20 k	-	75	V
VGS	gate-source voltage (DC)		-	±30	V
ID	drain current (DC)	Tmb = 25 ; VGS = 11 V; Figure 2 and 3	-	27	A
		Tmb = 100 ; VGS = 11 V; Figure 2	-	19.2	A
IDM	peak drain current	Tmb = 25 ; pulsed; tp 10 s; Figure 3	-	108	A
Ptot	total power dissipation	Tmb = 25 ; Figure 1	-	88	W
Tstg	storage temperature			+175
Tj	junction temperature			+175
Source-drain diode
IS	source (diode forward) current (DC)	Tmb = 25	-	27	A
ISM	peak source (diode forward) current	Tmb = 25 ; pulsed; tp 10 s	-	108	A

Description

PHP29N08T N-channel standard level field-effect power transistor in a plastic package using TrenchMOS™ technology.

Product availability:

PHP29N08T in SOT78 (TO-220AB),PHB29N08T in SOT404 (D2-PAK).