PHP27NQ11T

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Resistance Drain-Source RDS (on) : 0.05 Ohms
Packaging : Rail
Drain-Source Breakdown Voltage : 110 V
Continuous Drain Current : 27.6 A


Description

The PHP27NQ11T is a N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.Features of the PHP27NQ11T are:(1)Low on-state resistance;(2)Low thermal resistance.

The absolute maximum ratings of the PHP27NQ11T can be summarized as:(1)drain-source voltage (DC) ,25 °C Tj 175 °C:110V;(2)drain-gate voltage, (DC) 25 °C Tj 175 °C; RGS = 20 kW:110V;(3)gate-source voltage (DC):±20V;(4)drain current (DC) ,Tmb = 25 °C; VGS = 10 V; Figure 2 and 3:27.6 A;Tmb = 100 °C; VGS = 10 V; Figure 2:20 A;(5)peak drain current,Tmb = 25 °C; pulsed; tp 10 ms; Figure 3:112 A;(6)total power dissipation ,Tmb = 25 °C; Figure 1:107 W;(7)storage temperature:-55°C to+175 °C;(8)junction temperature:-55°C to+175 °C.

The electrical characteristics at Tj = 25 °C (unless otherwise specified) of the PHP27NQ11T can be summarized as:(1)drain-source breakdown voltage,ID = 250 mA; VGS = 0 V,Tj = 25 °C:110V;Tj = -55 °C:99V(2)gate-source threshold voltage,ID = 1 mA; VDS = VGS; Figure 9 and 10,Tj = 25 °C:2V to 4V;Tj = 175 °C:1V;Tj = -55 °C:4.4V(3)drain-source leakage current:,VDS = 100 V; VGS = 0 V,Tj = 25 °C:10A;Tj = 175 °C:500A(4)gate-source leakage current100nA:;(5)drain-source on-state resistance,VGS = 10 V; ID = 14 A; Figure 7 and 8,Tj = 25 °C:50m;Tj = 175 °C:135m.