Features: • 'Trench' technology• Low on-state resistance• Fast switching• Low thermal resistancePinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSSVDGRVGSIDIDMPtotTj, Tstg Drain-source voltageDrain-gate voltageGate-source voltageContinuous dra...
PHP23NQ15T: Features: • 'Trench' technology• Low on-state resistance• Fast switching• Low thermal resistancePinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDSS VDGR VGS ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 k Tmb = 25 ;VGS = 10 V Tmb = 100 ;VGS = 10 V Tmb = 25 Tmb = 25 |
- - - - - - - - 55 |
150 150 ± 20 23 16 92 136 175 |
V V V A A A W |
N-channel enhancement mode field-effect power transistor in a plastic envelope using 'trench' technology. The PHP23NQ15T device has very low on-state resistance. PHP23NQ15T is intended for use in dc to dc converters and general purpose switching applications.