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PHP23NQ11T

MOSFET TRENCHMOS (TM) FET

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SeekIC No. : 00162538 Detail

PHP23NQ11T: MOSFET TRENCHMOS (TM) FET

PHP23NQ11T Data Sheet

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Part Number:
PHP23NQ11T
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 110 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 23 A
Resistance Drain-Source RDS (on) : 0.07 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Rail    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Continuous Drain Current : 23 A
Resistance Drain-Source RDS (on) : 0.07 Ohms
Packaging : Rail
Drain-Source Breakdown Voltage : 110 V


Features:

· Low on-state resistance

· Low thermal resistance




Application

· DC-to-DC converters

· Switched-mode power supplies.




Description

PHP23NQ11T N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.


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