PHP21N06T

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 21 A
Resistance Drain-Source RDS (on) : 0.075 Ohms
Packaging : Rail


Application

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	Drain-source voltage	-	-	55	V
VDGR	Drain-gate voltage	RGS = 20 k	-	55	V
±VGS	Gate-source voltage	-	-	20	V
ID	Drain current (DC)	Tmb = 25 °C	-	21	A
ID	Drain current (DC)	Tmb = 100 °C		14.7	A
IDM	Drain current (pulse peak value)	Tmb = 25 °C	-	84	A
Ptot	Total power dissipation	Tmb = 25 °C	-	69	W
Tj Tstg	operating temperature and Storage temperature	-	-55	175	°C

Description

PHP21N06T N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology. The device features very low on-state resistance and has integral zener diodes givingESD protection up to 2kV. PHP21N06T is intended for use in converters and general purpose switching applications.