MOSFET RAIL PWR-MOS
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
Gate-Source Breakdown Voltage : | +/- 15 V | Continuous Drain Current : | 19 A | ||
Resistance Drain-Source RDS (on) : | 0.07 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Rail |
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDSS VDGR VGS VGSM ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Pulsed gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 kW Tj 150 Tmb = 25 Tmb = 100 Tmb = 25 Tmb = 25 |
- - - - - - - - - 55 |
55 55 ± 15 ± 20 19 13 76 56 175 |
V V V V A A A W |
PHP21N06LT, N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using 'trench' technology.