PHP21N06LT

MOSFET RAIL PWR-MOS

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PHP21N06LT Picture
SeekIC No. : 00161633 Detail

PHP21N06LT: MOSFET RAIL PWR-MOS

floor Price/Ceiling Price

Part Number:
PHP21N06LT
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 15 V Continuous Drain Current : 19 A
Resistance Drain-Source RDS (on) : 0.07 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Rail    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Gate-Source Breakdown Voltage : +/- 15 V
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 19 A
Resistance Drain-Source RDS (on) : 0.07 Ohms
Packaging : Rail


Features:

• 'Trench' technology
• Low on-state resistance
• Fast switching
• Logic level compatible



Application

• d.c. to d.c. converters
• switched mode power supplies



Pinout

  Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDSS
VDGR
VGS
VGSM
ID
IDM
Ptot
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Pulsed gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 to 175
Tj = 25 to 175; RGS = 20 kW
Tj 150
Tmb = 25
Tmb = 100
Tmb = 25
Tmb = 25
-
-
-
-
-
-
-
-
- 55
55
55
± 15
± 20
19
13
76
56
175
V
V
V
V
A
A
A
W



Description

PHP21N06LT, N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using 'trench' technology.




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