PHP20N06T

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 0.075 Ohms
Packaging : Rail
Continuous Drain Current : 20.3 A


Features:

·Very low on-state resistance
·Fast switching.


Application

·Switched mode power supplies
·DC to DC converters.


Pinout




Specifications

Symbol	Parameter	Conditions	Min	Max	Unit
VDS	drain-source voltage (DC)		-	55	V
VDGR	drain-gate voltage (DC)	RGS = 20 k	-	55	V
VGS	gate-source voltage (DC)		-	±20	V
ID	drain current (DC)	Tmb = 25 ; VGS = 10 V; Figure 2 and 3	-	20.3	A
		Tmb = 100 ; VGS = 10 V; Figure 2	-	14.3	A
IDM	peak drain current	Tmb = 25 ; pulsed; tp 10 s; Figure 3	-	81	A
Ptot	total power dissipation	Tmb = 25 ; Figure 1	-	62	W
Tstg	storage temperature		-55	+175
Tj	operating junction temperature		-55	+175
Source-drain diode
IDR	reverse drain current (DC)	Tmb = 25	-	20.3	A
IDRM	pulsed reverse drain current	Tmb = 25 ; pulsed; tp 10 s	-	81	A
Avalanche ruggedness
WDSS	non-repetitive avalanche energy	unclamped inductive load; ID = 11 A; VDS 55 V;VGS = 10 V; RGS = 50 ; starting Tj = 25	-	30.3	mJ

Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.

Product availability:

PHP20N06T in SOT78 (TO-220AB)

PHB20N06T in SOT404 (D 2-PAK).