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PHP18NQ11T

MOSFET TRENCH-100

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SeekIC No. : 00159817 Detail

PHP18NQ11T: MOSFET TRENCH-100

PHP18NQ11T Data Sheet

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Part Number:
PHP18NQ11T
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 110 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 18 A
Resistance Drain-Source RDS (on) : 0.09 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Rail    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Continuous Drain Current : 18 A
Package / Case : TO-220AB
Resistance Drain-Source RDS (on) : 0.09 Ohms
Packaging : Rail
Drain-Source Breakdown Voltage : 110 V


Features:

· Fast switching
· Low thermal resistance.


Application

· DC-to-DC converters
· Switched-mode power supplies
· Inverters
· Class-D audio amplifiers.


Pinout

Connection Diagram


Description

PHP18NQ11T N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology.


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