PHP18NQ10T

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Continuous Drain Current : 18 A
Package / Case : TO-220AB
Resistance Drain-Source RDS (on) : 0.09 Ohms
Packaging : Rail


Features:

• 'Trench' technology
• Low on-state resistance
• Fast switching
• Low thermal resistance


Application

• d.c. to d.c. converters
• switched mode power supplies


Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDSS VDGR VGS ID IDM Ptot Tj, Tstg	Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature	Tj = 25 to 175 Tj = 25 to 175; RGS = 20 k Tmb = 25 ;VGS = 10 V Tmb = 100 ;VGS = 10 V Tmb = 25 Tmb = 25	- - - - - - - - 55	100 100 ± 20 18 13 72 79 175	V V V A A A W

Description

PHP18NQ10T N-channel enhancement mode field-effect power transistor in a plastic envelope using 'trench' technology.