PHP160NQ08T

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 75 V
Resistance Drain-Source RDS (on) : 0.0056 Ohms
Continuous Drain Current : 75 A
Packaging : Rail


Features:

·Standard level threshold
·Very low on-state resistance.


Application

·Motors, lamps, solenoids
·DC-to-DC converters
·Uninterruptable power supplies
·General industrial applications.

Pinout




Specifications

Symbol	Parameter	Conditions	Min	Max	Unit
VDS	drain-source voltage (DC)	25 Tj 175	-	75	V
VDGR	drain-gate voltage (DC)	25 Tj 175 ; RGS = 20 k	-	75	V
VGS	gate-source voltage (DC)		-	±20	V
ID	drain current (DC)	Tmb = 25 ; VGS = 10 V; Figure 2 and 3	-	75	A
		Tmb = 100 ; VGS = 10 V; Figure 2	-	75	A
IDM	peak drain current	Tmb = 25 ; pulsed; tp 10 s; Figure 3	-	240	A
Ptot	total power dissipation	Tmb = 25 ; Figure 1	-	300	W
Tstg	storage temperature		-55	+175
Tj	junction temperature		-55	+175
Source-drain diode
IS	source (diode forward) current (DC) Tmb = 25		-	75	A
ISM	peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s		-	240	A
Avalanche ruggedness
EDS(AL)S	non-repetitive drain-source avalanche energy	unclamped inductive load; ID = 75A; tp = 0.15 ms; VDD 75 V; RGS = 50 ; VGS = 10 V; starting Tj = 25	-	560	mJ

Description

PHP160NQ08T N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology.