PHP12N50E

N-channel enchancement mode field-effect power transistor PHP12N50E in a plastic envelope using"trench" technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.It has five unique features: the first one is repetitive avalance rated. The second one is low thermal resistance. The third one is fast switching. The forth one is stable off-state charactersitics. The fifth one is high thermal cycling performance.

There are some limiting values(limiting values in accordance with the absolute maximum system) of PHP12N50E. Drain-source voltage(V_DSS) is 500 V max when Tj is 25 to 175.Drain-gate voltage(V_DGR) is 500 V when Tj is 25 to 150,R_GS is 20 k. Gate-source voltage is ±30 V. Continuous drian current(DC)(I_D) is 11.6 A max when Tmb is 25 and V_GS is 10 V.Drain current(pulse peak value)(I_DM) is 46 A when Tmb is 25.Total dissipation(P_D) is 167 W max. Junction temperature(Tj) is -55 to 150.Otherwise, there are also some thermal resistances about it.Thermal resistance junction to mounting base is 0.75 k/W max. Thermal resistance junction to ambient is 60 K/W typ .Electrical characteristics: Drain-source breakdwon voltage(V_(BR)DSS) is 500 V min when V_GS is 0V, I_D is 0.25 mA. Gate threshold voltage (V_GS(TO) ) is 2.0 Vmin,3.0 V typ and 4.0 V max when V_DS is V_GS, I_D is 0.25 mA. Drain-source leakage current(I_DSS) is 1uA typ and 25 uA max when V_DS is 500 V , V_GS is 0 V.Gate-source leakage current(I_GSS) is 10 nA typ and 200 nA max when V_GS is ±30 V,V_DS is 0 V.Drain-source on-state resistance(R_DS(ON) ) is 0.47 typ and 0.52 max when V_GS is 10 V , ID is 5.5 A. Total gate charge is 75 nC typ and 100 nC max when V_DD is 400 V , V_GS is 10 V,I_D is 11 A .Gate to source charge is 7 nC typ and 12 nC max when  V_DD is 400 V , V_GS is 10 V,I_D is 11 A .

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