PHP112

P-channel enchancement mode MOS transistor in an 8-pin plastic SO8(SOT96-1)package. PHP112 has threee unique features: The first one is high speed switching. The second one is no secondary breakdwon. The third one is very low on-resistance.Otherwise, it also has some applications such as motor and actuator driver, power management,synchronized recitifying, etc.

There are some limiting values(limiting values in accordance with the absolute maximum system) of PHP112.Drain-source voltage(DC)(V_DS) is -20 V max .Gate-source voltage is ±20 V(open drain).Drian current(DC)(I_D) is -3.1 A when Ts is below 80 .Drain current(pulse peak value)(I_DM) is -14 A (pulse width and duty cycle limited by maximum junction temperature).Total power dissipation(Ptot) is 2 W (up to Tsp is 80. Storage temperature(Tj) is -65 to 150.Otherwise, there are also some thermal resistances about it.Thermal resistance junction to solder point is 35 k/W . Electrical characteristics: Drain-source breakdwon voltage(V_(BR)DSS ) is -20 V min when V_GS is 0V, I_D is -10 uA. Gate threshold voltage (V_GS(TO) ) is -1 Vmin and -2.8 V max when V_DS is V_GS, I_D is 1 mA. Drain-source leakage current(I_DSS) is 1uA typ and 25 uA max when V_DS is 100 V , V_GS is 0 V.Gate-source leakage current(I_GSS) is -100 nA max when V_GS is 0 V,V_DS is -15 V.Drain-source on-state resistance(R_DS(ON) ) is 0.24 m max when V_GS is -4.5 V ,I_D is -1 A. Total gate charge is tbf nC max when V_DD is 80 V , V_GS is -10 V,I_D is -4 A,V_GS is -10 V .Gate to source charge is tbf nC max when V_DS is -10 V , V_GS is -10 V,I_D is -4 A .

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