Position: Home  > All Categories> Integrated Circuits (ICs) > PHP108NQ03LT

PHP108NQ03LT

Features: ·Logic level compatible·Very low on-state resistanceApplication·DC to DC converters·Switched mode power suppliesPinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 Tj 175 - 25 V VDGR drain-gate voltage (DC) 25 Tj 17...

product image

PHP108NQ03LT Picture
See larger image
SeekIC No. : 004460569 Detail

PHP108NQ03LT: Features: ·Logic level compatible·Very low on-state resistanceApplication·DC to DC converters·Switched mode power suppliesPinoutSpecifications Symbol Parameter Conditions Min Max Unit V...

PHP108NQ03LT Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
PHP108NQ03LT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·Logic level compatible
·Very low on-state resistance


Application

·DC to DC converters
·Switched mode power supplies


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 Tj 175 - 25 V
VDGR drain-gate voltage (DC) 25 Tj 175 ; RGS = 20 k - 25 V
ID drain current (DC) Tmb = 25 ; VGS = 5 V; Figure 2 and 3 - 75 A
Tmb = 100 ; VGS = 5 V; Figure 2 and 3 - 60 A
VGS gate-source voltage   - ±20 V
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 108 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 180 W
Tstg storage temperature   -55 +175
Tj junction temperature   -55 +175
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 75 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 108 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy		 unclamped inductive load; ID = 43A;
tp = 0.25 ms; VDD 15 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 		- 180 mJ



Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Product availability:

PHP108NQ03LT in SOT78 (TO-220AB)

PHB108NQ03LT in SOT404 (D2-PAK)

PHD108NQ03LT in SOT428 (D-PAK).


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Kits
IT243
UVSC-110-4E1
Tapes, Adhesives
803
AC452-2
Test Equipment
TOP853
TOP2005
Memory Cards, Modules
WT32
VTL5C7
Cables, Wires
821-0814-a
415-0100-150
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
View more