Features: • Schottky diode across each MOSFET • Low on-state resistance• Fast switching • Logic level compatible• Surface mount packageApplicationThese products are not designed for use in life support appliances, devices or systems where malfunction of these products...
PHN603S: Features: • Schottky diode across each MOSFET • Low on-state resistance• Fast switching • Logic level compatible• Surface mount packageApplicationThese products are not...
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• Schottky diode across each
MOSFET
• Low on-state resistance
• Fast switching
• Logic level compatible
• Surface mount package
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | Repetitive peak drain-source voltage | Tj = 25 to 150 | 25 | V | |
VDS | Continuous drain-source voltage | Tj 80 1 | - | 25 | V |
VDGR | Drain-gate voltage | RGS = 20 k | - | 25 | V |
VGS | Gate-source voltage | - | ± 20 | V | |
ID | Drain current per device (DC) | Ta = 25 Ta =100 | - | 5.5 3.5 | A A |
IDM | Drain current per device (pulse peak value) | Ta = 25 | - | 22 | A |
Ptot | Total power dissipation per device | Ta =25 Ta =100 | 1.67 0.67 | W W | |
Ptot | Total power dissipation all devices conducting | Ta = 25 Ta = 100 | - | 2.78 1.11 | W W |
Tstg, Tj | Storage & operating temperature | - | -55 | 150 |
Six n-channel, enhancement mode, logic level, field-effect power transistors and six schottky diodes configured as three half-bridges. This PHN603S has low on-state resistance and fast switching. The intended application is in computer disk and tape drives as a three phase brushless d.c. motor driver.
The PHN603S is supplied in the SOT137-1 (SO24) surface mounting package.