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PHN405

Features: · High-speed switching· No secondary breakdown· Very low on-state resistance· Current monitoring.Application· Motor and actuator driver· Power management· Synchronized rectification.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per FET VDS drain-source voltag...

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SeekIC No. : 004460562 Detail

PHN405: Features: · High-speed switching· No secondary breakdown· Very low on-state resistance· Current monitoring.Application· Motor and actuator driver· Power management· Synchronized rectification.Specif...

PHN405 Data Sheet

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Part Number:
PHN405
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· High-speed switching
· No secondary breakdown
· Very low on-state resistance
· Current monitoring.


Application

· Motor and actuator driver
· Power management
· Synchronized rectification.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per FET
VDS drain-source voltage (DC)   - 30 V
VGS gate-source voltage (DC)   - ±20 V
ID drain current (DC) Ts = 80 °C; note 1 - 3.7 A
IDM peak drain current note 2 - 14.8 A
Ptot total power dissipation Ts = 80 °C; note 3 - 1.4 W
Ts = 80 °C; note 4 - 1.25 W
Ts = 80 °C; note 5 - 1.09 W
Tstg storage temperature   -55 +150
Tj operating junction temperature   -55 150
Current monitor
IM monitor current (DC) Ts = 80 °C - 50 mA
IMM peak monitor current note 2 - 220 mA
Source-drain diode
IS source current (DC) Ts = 80 °C - 1.4 A
ISM peak source current note 2 - 5.6 A



Description

PHN405, Four enhancement mode MOS transistors in a 16-pin plastic SOT338-1 (SSOP16) package. Two transistors feature current monitoring (sense FETs).




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