PHM8001

The PHM8001 is designed as one kind of MOSFET module that has some points of features: (1)Trench Gate MOS FET Module; (2)Super Low Rds(ON) 1.4 milliohms( @800A ); (3)With Fast Recovery Source-Drain Diode. And this device can be used in wide range of applications such as Chopper Control For FORKLIFTs.

The absolute maximum ratings of the PHM8001 can be summarized as:(1)Drain-Source Voltage (VGS=0V): 150 V;(2)Gate - Source Voltage: +/- 20 V;(3)Continuous Drain Current: 640 or 800 A;(4)Pulsed Drain Current: 1,600 (Tc=25°C) A;(5)Total Power Dissipation:2650 (Tc=25°C) W;(6)Operating Junction Temperature Range: -40 to +150 °C;(7)Storage Temperature Range: -40 to +125 °C;(8)Isolation Voltage Terminals to Base AC, 1 min.): 2,500 V;(9)Mounting Torque Module Base to Heatsink: 3.0 N.M.

The electrical characteristics of PHM8001 can be summarized as:(1)Zero Gate Voltage Drain Current: 4.8 mA;(2)Gate-Source Leakage Current: 4.8 A;(3)Gate-Source Threshold Voltage: 1.0 to 3.2 V;(4)Static Drain-Source On-Resistance: 1.15 or 1.40 m-ohm;(5)Drain-Source On-Voltage: 1.10 to 1.25 V;(6)Input Capacitance: 165 nF;(7)Output Capacitance: 20 nF;(8)Reverse Transfer Capacitance: 20 nF;(9)Rise Time: 500 ns;(10)Fall Time: 180 ns. If you want to know more information about the PHM8001, please download the datasheet in www.seekic.com or www.chinaicmart.com .