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PHKD6N02LT

DescriptionThe PHKD6N02LT Dual N-channel enhancement mode field-effect transistors in a plastic surface mount package using TrenchMOS™ technology. Features of the PHKD6N02LT are:(1)Low on-state resistance; (2)Logic level compatible; (3)Dual device; (4)Surface mount package; (5)DC-to-D...

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SeekIC No. : 004460519 Detail

PHKD6N02LT: DescriptionThe PHKD6N02LT Dual N-channel enhancement mode field-effect transistors in a plastic surface mount package using TrenchMOS™ technology. Features of the PHKD6N02LT are:(1)Low ...

PHKD6N02LT Data Sheet

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Part Number:
PHKD6N02LT
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Description



Description

The PHKD6N02LT Dual N-channel enhancement mode field-effect transistors in a plastic surface mount package using TrenchMOS™ technology.

Features of the PHKD6N02LT are:(1)Low on-state resistance; (2)Logic level compatible; (3)Dual device; (4)Surface mount package; (5)DC-to-DC converters; (6)Notebook computers; (7)Portable appliances; (8)Battery chargers.

The absolute maximum ratings of the PHKD6N02LT can be summarized as:(1)VDS : 20 V MAX; (2)VDGR :20V MAX; (3)VGS:±12 V MAX; (4)IDM peak drain current:44A MAX; (5)Ptot:4.17 W MAX; (6)Tstg : -55 +150 °C; (7)Tj: -55 ~+150 °C.

If you want to know more information such as the electrical characteristics of PHKD6N02LT ,please download the datasheet in www.seekdatasheet.com .




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