MOSFET N-CH TRENCHMOSTM TRANSISTOR
PHK4NQ10T,518: MOSFET N-CH TRENCHMOSTM TRANSISTOR
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 4 A | ||
Resistance Drain-Source RDS (on) : | 70 mOhms | Configuration : | Single Quad Drain Triple Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-96 | Packaging : | Reel - 13 in |