Features: · NPN Silicon Microwave Power Transistor · Common Base Configuration · Broadband Class C Operation ·High Efficiency Interdigitated Geometry · Diffused Emitter Ballasting Resistors · Gold Metalization System ·Internal Input Impedance Matching · Hermetic Metal/Ceramic Package Specification...
PHI 214-25L: Features: · NPN Silicon Microwave Power Transistor · Common Base Configuration · Broadband Class C Operation ·High Efficiency Interdigitated Geometry · Diffused Emitter Ballasting Resistors · Gold M...
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Parameter | Symbol | Rating | Units |
Collector-Emitter Voltage | VCES | 70 | v |
Emitter-Base Voltage | VEBO | 3.0 | v |
Collector Current (Peak) | IC | 1.6 | A |
Total Power Dissipation | P TOT | 40 | W |
JunctionTemperature | Tj | 200 | |
Storage Temperature | T STG | -65 to +200 |