PHE95N03LT

Features: ·Low on-state resistance·Fast switching.Application·High frequency computer motherboard DC to DC convertersPinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) Tj =25 to 175 - 25 V VDGR drain-gate voltage (DC) Tj =25 to 175 ;...

product image

PHE95N03LT Picture
SeekIC No. : 004460496 Detail

PHE95N03LT: Features: ·Low on-state resistance·Fast switching.Application·High frequency computer motherboard DC to DC convertersPinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS d...

floor Price/Ceiling Price

Part Number:
PHE95N03LT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/25

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·Low on-state resistance
·Fast switching.



Application

·High frequency computer motherboard DC to DC converters


Pinout

  Connection Diagram




Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) Tj =25 to 175 - 25 V
VDGR drain-gate voltage (DC) Tj =25 to 175 ; RGS = 20 k - 25 V
VGS gate-source voltage(DC)   - ±15 V
VGSM gate-source voltage TP 50 s; pulsed; duty cycle = 25%;Tj 150   ±20  
ID drain current (DC) Tmb = 25 ; VGS = 5 V; Figure 2 and 3 - 75 A
Tmb = 100 ; VGS = 5 V; Figure 2 - 61 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 240 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 125 W
Tstg storage temperature   -55 +175
Tj operating junction temperature   -55 +175
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 75 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 240 A
Avalanche ruggedness
EAS non-repetitive avalanche energy unclamped inductive load; ID = 75 A;
tp = 0.1 ms; VDD 15 V; RGS = 50 ;
VGS = 5 V; starting Tj = 25
- 120 mJ
IAS non-repetitive avalanche current unclamped inductive load; VDD 15 V; RGS = 50 ;
VGS = 5 V; starting Tj = 25
- 75 A



Description

N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology.

Product availability:

PHP95N03LT in SOT78 (TO-220AB)

PHB95N03LT in SOT404 (D2-PAK)

PHE95N03LT in SOT226 (I2-PAK).


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Potentiometers, Variable Resistors
Discrete Semiconductor Products
Isolators
Static Control, ESD, Clean Room Products
View more