Transistors Bipolar (BJT) RAIL PWR-MOS
PHE13009,127: Transistors Bipolar (BJT) RAIL PWR-MOS
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ApplicationThese products are not designed for use in life support appliances, devices or systems ...
Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 400 V |
Maximum DC Collector Current : | 12 A | DC Collector/Base Gain hfe Min : | 8 |
Configuration : | Single | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-220AB |
Packaging : | Tube |
Technical/Catalog Information | PHE13009,127 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 400V |
Current - Collector (Ic) (Max) | 12A |
Power - Max | 80W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 5A, 5V |
Vce Saturation (Max) @ Ib, Ic | 320mV @ 1A, 5A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | 5mA |
Mounting Type | Through Hole |
Package / Case | TO-220AB-3 |
Packaging | Tube |
Drawing Number | 568; SOT78; ; 3 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | PHE13009,127 PHE13009,127 |