PHE13009,127, US $ .19-.21 , NXP Semiconductors, PHE13009,127 DataSheet download, circuit diagram from SeekIC.com

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PHE13009,127: Transistors Bipolar (BJT) RAIL PWR-MOS

PHE13009,127 Data Sheet

US $ .19~.21 / Piece | Get Latest Price

Part Number:: PHE13009,127
Mfg:: NXP Semiconductors
Supply Ability:: 5000

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0~3450
3450~6000
6000~12000

Unit Price
$.21
$.2
$.19

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Upload time: 2024/10/17

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Recent History
What is this?

PHE13002AU evaluate
ApplicationThese products are not designed for use in life support appliances, devices or systems ...
PHE13003A,126 evaluate
US $.08 - .23 / Piece

Transistors Bipolar (BJT) Single NPN 1A 2.1W
PHE13003AU evaluate
ApplicationThese products are not designed for use in life support appliances, devices or systems ...

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	400 V
Maximum DC Collector Current :	12 A	DC Collector/Base Gain hfe Min :	8
Configuration :	Single	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-220AB
Packaging :	Tube

Description

Emitter- Base Voltage VEBO :
Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 400 V
Maximum DC Collector Current : 12 A
DC Collector/Base Gain hfe Min : 8
Package / Case : TO-220AB
Packaging : Tube

Parameters:

Technical/Catalog Information	PHE13009,127
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	400V
Current - Collector (Ic) (Max)	12A
Power - Max	80W
DC Current Gain (hFE) (Min) @ Ic, Vce	8 @ 5A, 5V
Vce Saturation (Max) @ Ib, Ic	320mV @ 1A, 5A
Frequency - Transition	-
Current - Collector Cutoff (Max)	5mA
Mounting Type	Through Hole
Package / Case	TO-220AB-3
Packaging	Tube
Drawing Number	568; SOT78; ; 3
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PHE13009,127 PHE13009,127

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PHE13009,127

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