Transistors Bipolar (BJT) RAIL PWR-MOS
PHE13007,127: Transistors Bipolar (BJT) RAIL PWR-MOS
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
ApplicationThese products are not designed for use in life support appliances, devices or systems ...
Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 400 V |
Emitter- Base Voltage VEBO : | 9 V | Maximum DC Collector Current : | 8 A |
Configuration : | Single | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-78 |
Packaging : | Tube |
Technical/Catalog Information | PHE13007,127 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 700V |
Current - Collector (Ic) (Max) | 8A |
Power - Max | 80W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 2A, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 400mA, 2A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | 200A |
Mounting Type | Through Hole |
Package / Case | TO-220AB-3 |
Packaging | Tube |
Drawing Number | 568; SOT78; ; 3 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | PHE13007,127 PHE13007,127 |