Features: • 'Trench' technology• Low on-state resistance• Fast switching• Low thermal resistancePinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSSVDGRVGSIDIDMPDTj, Tstg Drain-source voltageDrain-gate voltageGate-source voltageContinuous drain...
PHD9NQ20T: Features: • 'Trench' technology• Low on-state resistance• Fast switching• Low thermal resistancePinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V...
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Transistors Bipolar (BJT) Trans MOSFET N-CH 25V 75A 3-Pin
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDSS VDGR VGS ID IDM PD Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175Tj = 25 to 175; RGS = 20 kW Tmb = 25 ; VGS = 10 V Tmb = 100 ; VGS = 10 V Tmb = 25 Tmb = 25 |
- - - - - - - -55 |
200 200 ± 20 8.7 6.2 35 88 175 |
V |
N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.
The PHP9NQ20T is supplied in the SOT78 (TO220AB) conventional leaded package
The PHB9NQ20T is supplied in the SOT404 (D2PAK) surface mounting package
The PHD9NQ20T is supplied in the SOT428 (DPAK) surface mounting package