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PHD78NQ03LT

Features: ·Low on-state resistance·Fast switchingApplication·Computer motherboards·DC to DC convertersPinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) Tj =25 to 175 - 25 V VDGR drain-gate voltage (DC) Tj =25 to 175 ; RGS = 20 k - ...

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SeekIC No. : 004460463 Detail

PHD78NQ03LT: Features: ·Low on-state resistance·Fast switchingApplication·Computer motherboards·DC to DC convertersPinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source vol...

PHD78NQ03LT Data Sheet

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Part Number:
PHD78NQ03LT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

·Low on-state resistance
·Fast switching


Application

·Computer motherboards
·DC to DC converters


Pinout

Connection Diagram




Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) Tj =25 to 175 - 25 V
VDGR drain-gate voltage (DC) Tj =25 to 175 ; RGS = 20 k - 25 V
VGS gate-source voltage   - ±15 V
VGSM gate-source voltage TP 50 s; pulsed; duty cycle = 25%;Tj 150   ±20  
ID drain current (DC) Tmb = 25 ; VGS = 5 V; Figure 2 and 3 - 61 A
Tmb = 100 ; VGS = 5 V; Figure 2 - 43  
Tmb = 25 ; VGS =10 V - 75  
Tmb = 100 ; VGS =10 V - 53 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 228 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 93 W
Tstg storage temperature   -55 +175
Tj junction temperature   -55 +175
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 75 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s -

228

 A



Description

N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology.

Product availability:

PHP78NQ03LT in SOT78 (TO-220AB)

PHB78NQ03LT in SOT404 (D2-PAK)

PHD78NQ03LT in SOT428 (D-PAK).


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