PHD37N06LT

Features: • 'Trench' technology• Very low on-state resistance• Fast switching• Stable off-state characteristics• High thermal cycling performance• Low thermal resistancePinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSSVD...

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SeekIC No. : 004460445 Detail

PHD37N06LT: Features: • 'Trench' technology• Very low on-state resistance• Fast switching• Stable off-state characteristics• High thermal cycling performance• Low thermal res...

floor Price/Ceiling Price

Part Number:
PHD37N06LT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance



Pinout

  Connection Diagram




Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDSS
VDGR
VGS

ID
IDM
Ptot
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage

Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 to 175
Tj = 25 to 175; RGS = 20 kW

Tmb = 25
Tmb = 100
Tmb = 25
Tmb = 25
-
-
-
-
-
-
-
- 55
55
55
± 13
37
26
148
100
175
V
V
V
A
A
A
W



Description

PHD37N06LT N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. PHD37N06LT is intended for use in dc to dc converters and general purpose switching applications.




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