Features: • Repetitive Avalanche Rated• Fast switching• Stable off-state characteristics• High thermal cycling performance• Low thermal resistancePinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSSVDGRVGSIDIDMPtotTj, Tstg Drain-source vo...
PHD2N60E: Features: • Repetitive Avalanche Rated• Fast switching• Stable off-state characteristics• High thermal cycling performance• Low thermal resistancePinoutSpecifications ...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDSS VDGR VGS ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 k Tmb = 25 ;VGS = 10 V Tmb = 100 ;VGS = 10 V Tmb = 25 Tmb = 25 |
- - - - - - - - 55 |
600 600 ± 30 1.9 1.2 7.6 50 150 |
V V V A A A W |
PHD2N60E N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.