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PHD2N50E

Features: • Repetitive Avalanche Rated• Fast switching• Stable off-state characteristics• High thermal cycling performance• Low thermal resistancePinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSSVDGRVGSIDIDMPtotTj, Tstg Drain-source vo...

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SeekIC No. : 004460439 Detail

PHD2N50E: Features: • Repetitive Avalanche Rated• Fast switching• Stable off-state characteristics• High thermal cycling performance• Low thermal resistancePinoutSpecifications ...

PHD2N50E Data Sheet

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Part Number:
PHD2N50E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance


Pinout

Connection Diagram




Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDSS
VDGR
VGS

ID
IDM
Ptot
Tj, Tstg		 Drain-source voltage
Drain-gate voltage
Gate-source voltage

Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature		 Tj = 25 to 175
Tj = 25 to 175; RGS = 20 k

Tmb = 25 ;VGS = 10 V
Tmb = 100 ;VGS = 10 V
Tmb = 25
Tmb = 25 		-
-
-
-
-
-
-
- 55		 500
500
± 30
2
1.3
8
50
150		 V
V
V
A
A
A
W



Description

PHD2N50E N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.




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