Features: • 'Trench' technology • Very low on-state resistance• Fast switching • Stable off-state characteristics• High thermal cycling performance • Low thermal resistancePinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSSVDGRVGSID...
PHD24N03LT: Features: • 'Trench' technology • Very low on-state resistance• Fast switching • Stable off-state characteristics• High thermal cycling performance • Low thermal ...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDSS VDGR VGS ID IDM PD Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 k Tmb = 25 Tmb = 100 Tmb = 25 Tmb = 25 |
- - - - - - - -55 |
30 30 ± 13 24 20 96 60 175 |
V V V A A A W |
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope transistor in a plastic envelope transistor in a plastic envelope transistor in a plastic envelope dc to dc converters and general dc to dc converters and general.
ThePHD24N03LT is supplied in the SOT428 (DPAK) surface mounting package.